[The 42nd JSAP Young Scientist Award Speech] Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p–i–n diodes

Shohei Hayashi; Tamotsu Yamashita; Junji Senzaki; Masaki Miyazato; Mina Ryo; Masaaki Miyajima; Tomohisa Kato; Yoshiyuki Yonezawa; Kazutoshi Kojima; Hajime Okumura

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[10p-Z23-1~16] 15.6 Group IV Compound Semiconductors (SiC)

Thu. Sep 10, 2020 1:15 PM - 6:00 PM Z23

Sakiko Kawanishi(Tohoku Univ.), Munetaka Noguchi(Mitsubishi Electric), Takeshi Tawara(富士電機)

3:45 PM - 4:00 PM

[10p-Z23-9] [The 42nd JSAP Young Scientist Award Speech] Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p–i–n diodes

〇Shohei Hayashi¹, Tamotsu Yamashita², Junji Senzaki³, Masaki Miyazato⁴, Mina Ryo⁴, Masaaki Miyajima⁴, Tomohisa Kato³, Yoshiyuki Yonezawa³, Kazutoshi Kojima³, Hajime Okumura³ (1.Toray Research Center, 2.Showa Denko, 3.AIST, 4.Fuji Electric)

Keywords:SiC, stacking fault, basal plane dislocation