[11a-Z02-1~11] 15.4 III-V族窒化物結晶

▲ [11a-Z02-1] Optical properties of top-down fabricated site-controlled GaN quantum disks

〇(M2)SIJIA XIA¹、Munetaka Arita²、Yasuhiko Arakawa²、Mark J. Holmes^1,2 (1.IIS, Univ. of Tokyo、2.NanoQuine Univ. of Tokyo)

キーワード：III-nitride nanostructure, quantum disk, top-down approach

GaN/AlGaN nanostructures are of considerable interest for application in optical devices such as LEDs, laser diodes, and even single photon emitters. In particular, quantum structures in nanopillars are considered promising as way to improved device performance (in terms of reduced strain, increased material quality, and increased photon output coupling). We have fabricated UV-emitting site-controlled GaN/AlGaN quantum disks (QDisks) in nanopillars using a top-down lithography/etching process, and here we discuss the device characteristics, including analyzing the carrier dynamics of the structures using both time-integrated photoluminescence (TIPL) and time-resolved photoluminescence (TRPL) spectroscopy.