[11a-Z02-1~11] 15.4 III-V-group nitride crystals

▲ [11a-Z02-2] Enhanced single photon emission from a GaN quantum dot in a Bullseye structure

〇(M2)SIJIA XIA¹, Tomoyuki Aoki¹, Kang Gao², Munetaka Arita², Yasuhiko Arakawa², Mark J. Holmes^1,2 (1.IIS, Univ. of Tokyo, 2.NanoQuine Univ. of Tokyo)

Keywords:III-nitride nanostructure, single photon, quantum dot

Single photon emitters made from III-nitride quantum dots (QDs) are of interest for use of quantum information processing technologies, and offer some benefits such as high temperature operation and wide range of emission wavelengths. However, as part of ongoing research, it is now important to try and improve the optical properties of the devices, for example, by increasing the photon extraction efficiency and suppressing the effects of spectral diffusion. Recently, in order to increase the extraction efficiency from GaN QDs, we have been developing a bullseye structure to direct the emission into a narrow solid angle for efficient collection using an objective lens, leading to a theoretical extraction efficiency of ~13% into an objective lens of NA 0.4 (compared to an equivalent extraction efficiency of ~1.3% for an unprocessed QD). In this presentation we describe the successful realization of single photon emission with an enhanced extraction rate from such a structure.