10:45 AM - 11:00 AM
[11a-Z02-7] Low-angle incident microchannel epitaxy of GaN using graphene mask by chemical beam epitaxy
Keywords:gallium nitrides, graphene, microchannel epitaxy
In the low-angle incidence microchannel epitaxy of GaN, a grahene mask was used. The lateral growth of GaN was successfully obtained also using graphene masks. The single layer graphene showed a special feature of the lateral growth with compared to the double layered graphene.