[11a-Z02-1~11] 15.4 III-V-group nitride crystals

[11a-Z02-7] Low-angle incident microchannel epitaxy of GaN using graphene mask by chemical beam epitaxy

〇Shigeya Naritsuka¹, Shun Takenaka¹, Takahiro Maruyama¹ (1.Meijo Univ.)

Keywords:gallium nitrides, graphene, microchannel epitaxy

In the low-angle incidence microchannel epitaxy of GaN, a grahene mask was used. The lateral growth of GaN was successfully obtained also using graphene masks. The single layer graphene showed a special feature of the lateral growth with compared to the double layered graphene.