09:00 〜 09:15
▲ [11a-Z07-1] Selective growth and micro patterning of Au/Pb(Zr0.52Ti0.48)O3/SrRuO3 film capacitor structure by water lift off process
キーワード：Selective growth, Water lift off, micro patterning
Introduction
Oxide based electronic devices have been developed due to the excellent and unique electrical properties of oxides, such as high-Tc superconductor, wide-gap semiconductor, and ferroelectrics. Concerning the miniaturization and high performance of such devices, the micro/nano fabrication technique for oxides is increasingly important. However, it is not easy to realize the high-etching rate for oxides due to its chemical stability. In this work, we have prepared selective grown film capacitors of Au/Pb(Zr0.52Ti0.48)O3 (PZT)/SrRuO3 (SRO) on c-plane sapphire by WLO process and investigated its structural and electrical properties.
Experimental
Patterned a-CaO films were prepared on c-plane sapphire substrate through photolithography process and deposition of a-CaO at R.T. by pulsed laser deposition (PLD), then followed by lift off process using acetone solution. SRO and PZT were deposited on the substrate at 720 and 630 oC, respectively by PLD. SRO and PZT films were patterned by removing a-CaO sacrificial layer in pure water.
Results and discussion
Patterned SRO and PZT films were successfully prepared without noticeable a-CaO residue on the substrate. This result shows that selective growth of each oxide films can be realized by WLO process.
Although observed P-V curves of patterned capacitors indicate clear ferroelectric behavior, their polarization value are slightly lower than that of conventional capacitor. Probably this is caused by the higher leakage current of patterned capacitor compared to that of conventional one and observed higher leakage current might be occurred at the edge of line-patterned SRO bottom electrode. To investigate the influences of shunt components, we will evaluate the presence of unexpected structure such as over grown parts due to the selective growth process.
Oxide based electronic devices have been developed due to the excellent and unique electrical properties of oxides, such as high-Tc superconductor, wide-gap semiconductor, and ferroelectrics. Concerning the miniaturization and high performance of such devices, the micro/nano fabrication technique for oxides is increasingly important. However, it is not easy to realize the high-etching rate for oxides due to its chemical stability. In this work, we have prepared selective grown film capacitors of Au/Pb(Zr0.52Ti0.48)O3 (PZT)/SrRuO3 (SRO) on c-plane sapphire by WLO process and investigated its structural and electrical properties.
Experimental
Patterned a-CaO films were prepared on c-plane sapphire substrate through photolithography process and deposition of a-CaO at R.T. by pulsed laser deposition (PLD), then followed by lift off process using acetone solution. SRO and PZT were deposited on the substrate at 720 and 630 oC, respectively by PLD. SRO and PZT films were patterned by removing a-CaO sacrificial layer in pure water.
Results and discussion
Patterned SRO and PZT films were successfully prepared without noticeable a-CaO residue on the substrate. This result shows that selective growth of each oxide films can be realized by WLO process.
Although observed P-V curves of patterned capacitors indicate clear ferroelectric behavior, their polarization value are slightly lower than that of conventional capacitor. Probably this is caused by the higher leakage current of patterned capacitor compared to that of conventional one and observed higher leakage current might be occurred at the edge of line-patterned SRO bottom electrode. To investigate the influences of shunt components, we will evaluate the presence of unexpected structure such as over grown parts due to the selective growth process.