The 81st JSAP Autumn Meeting, 2020

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Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[11a-Z07-1~9] 6.3 Oxide electronics

Fri. Sep 11, 2020 9:00 AM - 11:30 AM Z07

Shoso Shingubara(Kansai Univ.)

10:30 AM - 10:45 AM

[11a-Z07-6] Effect of applied pulse polarity on analog behavior of HfO2 charge trap memory

〇(M1)Hisato Onishi1, Yasuo Nara1 (1.Univ. of Hyogo)

Keywords:HfO2, charge trap memory, Flat band voltage