[11a-Z09-1~12] 13.5 デバイス／配線／集積化技術

[11a-Z09-4] Improvement of Ge MOS interfacial quality through HI plasma treatment

〇WENHSIN CHANG¹、Toshifumi Irisawa¹、Hiroyuki Ishii¹、Tatsuro Maeda¹ (1.AIST)

キーワード：Ge, HI, MOSCAPs