[11a-Z09-1~12] 13.5 デバイス／配線／集積化技術

▲ [11a-Z09-7] 3D Integration of RRAM Array with Oxide Semiconductor FET for In-Memory Computing

〇(P)Jixuan Wu¹、Fei Mo¹、Takuya Saraya¹、Toshiro Hiramoto¹、Masaharu Kobayashi¹ (1.IIS, Univ. of Tokyo)

キーワード：3D integration, RRAM array, IGZO access transistor

In-memory computing has attracted worldwide attention for deep neural network applications because of its high energy efficiency [1]. In particular, RRAM-based neural network has been extensively studied from device to system level [2-5]. 2D neural net suffers from large energy and delay in long interconnect wires. 3D neural net is a new direction enabling area-efficient, low power, and low latency computing. In this work, we propose and develop a monolithic 3D integration of RRAM array with IGZO access transistor. Then we demonstrate basic functionality of in-memory computing in the 3D neural net.