[11a-Z18-1~10] 3.11 Photonic structures and phenomena

[11a-Z18-1] Effect of electrostatic irradiation on Raman silicon nanocavity laser (Ⅱ)

〇Satoshi Yasuda¹, Takashi Asano², Susumu Noda², Takahashi Yasushi¹ (1.Osaka Pref. Univ., 2.Kyoto Univ.)

Keywords:Raman silicon laser, photonic crystal, static electricity

Static electricity generated irregularly in every space is known as a phenomenon that is difficult to detect, causing various problems in industry.We are aiming to develop electrostatic detection technology using ultra-small Raman silicon laser. This laser utilizes two resonance modes (excitation mode and Stokes mode) formed in a heterostructure nanocavity for laser oscillation. In a sample in which the Q values of the two resonance modes are high (typically Qp>10⁵,Qs>10⁶)and the frequency difference matches well with the Raman shift of silicon, the excitation mode can be excited by an external laser source. Raman laser oscillation occurs. Last time, we reported that the oscillation stopped in a few seconds when the cavity during laser oscillation was irradiated with static electricity. This time, we report the resonance mechanism of two resonance modes measured under static electricity irradiation.