[11a-Z29-1~15] 17.3 Layered materials

[11a-Z29-6] Removal of interfacial contaminations in hBN/1L-MoTe₂ heterostructures by annealing

〇Shunya Hayashida¹, Kenji Watanabe², Takashi Taniguchi², Kentarou Sawano¹, Yusuke Hoshi¹ (1.Tokyo City Univ., 2.NIMS)

Keywords:semiconductor, TMD