[11a-Z29-1~15] 17.3 Layered materials

△ [11a-Z29-8] Growth of Cr_1/3NbSe₂ epitaxial thin films and their magnetic properties

〇Yuki Majima¹, Bruno Kenichi Saika¹, Hideki Matsuoka¹, Masaki Nakano^1,2, Satoshi Yoshida¹, Kyoko Ishizaka^1,2, Yoshihiro Iwasa^1,2 (1.Tokyo Univ., 2.RIKEN-CEMS)

Keywords:2D materials, transition-metal dichalcogenide, molecular beam epitaxy

Recently, transition-metal dichalcogenides have been extensively studied because of their intriguing physical properties and functionalities emerging with reduced dimensionality. We here employ molecular-beam epitaxy (MBE), by which we could grow Cr_1/3NbSe₂ epitaxial thin films with periodically Cr-intercalated phase. We found that those films show largely different transport properties from those of undoped NbSe₂. In the presentation, we report the detailed MBE growth process and discuss structural, electrical, and magnetic properties of the obtained films.