The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

17 Nanocarbon Technology » 17.3 Layered materials

[11a-Z29-1~15] 17.3 Layered materials

Fri. Sep 11, 2020 8:30 AM - 12:30 PM Z29

Taishi Takenobu(Nagoya Univ.)

10:30 AM - 10:45 AM

[11a-Z29-8] Growth of Cr1/3NbSe2 epitaxial thin films and their magnetic properties

Yuki Majima1, Bruno Kenichi Saika1, Hideki Matsuoka1, Masaki Nakano1,2, Satoshi Yoshida1, Kyoko Ishizaka1,2, Yoshihiro Iwasa1,2 (1.Tokyo Univ., 2.RIKEN-CEMS)

Keywords:2D materials, transition-metal dichalcogenide, molecular beam epitaxy

Recently, transition-metal dichalcogenides have been extensively studied because of their intriguing physical properties and functionalities emerging with reduced dimensionality. We here employ molecular-beam epitaxy (MBE), by which we could grow Cr1/3NbSe2 epitaxial thin films with periodically Cr-intercalated phase. We found that those films show largely different transport properties from those of undoped NbSe2. In the presentation, we report the detailed MBE growth process and discuss structural, electrical, and magnetic properties of the obtained films.