Characterizations of crystal growth for the realization of nanowire-LD using GaInN/GaN multiple-quantum shell/tunnel junction

Naoki Sone; Renji Okuda; Yoshiya Miyamoto; Kazuma Ito; Kazuyoshi Iida; Koji Okuno; Koichi Mizutani; Masaki Ohya; Weifang Lu; Satoshi Kamiyama; Tetsuya Takeuchi; Motoaki Iwaya; Isamu Akasaki

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[11p-Z02-1~19] 15.4 III-V-group nitride crystals

Fri. Sep 11, 2020 1:00 PM - 6:15 PM Z02

Tsutomu Araki(Ritsumeikan Univ.), Shugo Nitta(Nagoya Univ.), Tomoyuki Tanikawa(Osaka Univ.)

6:00 PM - 6:15 PM

[11p-Z02-19] Characterizations of crystal growth for the realization of nanowire-LD using GaInN/GaN multiple-quantum shell/tunnel junction

〇Naoki Sone^1,3, Renji Okuda³, Yoshiya Miyamoto³, Kazuma Ito³, Kazuyoshi Iida^2,3, Koji Okuno^2,3, Koichi Mizutani^2,3, Masaki Ohya^2,3, Weifang Lu³, Satoshi Kamiyama³, Tetsuya Takeuchi³, Motoaki Iwaya³, Isamu Akasaki^3,4 (1.KOITO MANUFACTURING Co., Ltd, 2.TOYODA GOSEI Co., Ltd, 3.Meijo Univ., 4.Nagoya Univ.)

Keywords:nanowire