The 81st JSAP Autumn Meeting, 2020

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[11p-Z02-1~19] 15.4 III-V-group nitride crystals

Fri. Sep 11, 2020 1:00 PM - 6:15 PM Z02

Tsutomu Araki(Ritsumeikan Univ.), Shugo Nitta(Nagoya Univ.), Tomoyuki Tanikawa(Osaka Univ.)

2:30 PM - 2:45 PM

[11p-Z02-7] Epitaxial Growth of GaN Thin Films on AlN/h-BN Buffer Layers by MBE

〇Fumiya Harata1, Hideki Nakazawa1, Hiroshi Okamoto1, Masanobu Hiroki2, Kazuhide Kumakura2, Yasuyuki Kobayashi1 (1.Hirosaki Univ., 2.NTT. Corp. NTT Basic Research Lab.)

Keywords:boron nitride, molecular beam epitaxy