[11p-Z04-1~14] 13.7 Compound and power electron devices and process technology

[11p-Z04-2] Investigation of Self-Heating in Ga₂O₃ Schottky Barrier Diode by Raman Spectroscopy

〇Zexin Wan¹, Daiki Takatsuki¹, Chia-Hung Lin², Jianbo Liang¹, Masataka Higashiwaki², Naoteru Shigekawa¹ (1.Osaka City Univ., 2.NICT)

Keywords:Widegap semiconductor material, Raman spectroscopy

As a new wide-gap semiconductor material, β-Ga₂O₃ is expected to be applied to power devices. However, poor thermal conductivity limits the properties of β-Ga₂O₃ devices, making thermal management of Ga₂O₃ device an important issue. In this study, we evaluated the temperature of β-Ga₂O₃ Schottky barrier diode (SBD) during energization using Raman spectroscopy and compared it with the calculation result.