[11p-Z04-1~14] 13.7 Compound and power electron devices and process technology

[11p-Z04-4] Fabrication of beta-(AlGa)₂O₃/Ga₂O₃ resonant tunneling diodes

〇Hironori Okumura¹ (1.Tsukuba Univ.)

Keywords:Gallium Oxide, resonant tunneling diode, heavy doping

I report on the growth of double-barrier b-(Al_0.15Ga_0.85)₂O₃/Ga₂O₃/(Al_0.15Ga_0.85)₂O₃ heterostructure and heavily Sn-doped b-Ga₂O₃ layers toward the application of resonant tunneling diodes. The Ga₂O₃ and (AlGa)₂O₃ layers were grown on a b-Ga₂O₃ (010) substrate by plasma-assisted molecular-beam epitaxy. The heavily Sn-doped b-Ga₂O₃ layer had a layer resistivity of 2´10^-3 Wcm and a specific contact resistivity of 9´10^-6 Wcm^-2. The diode with the double-barrier (AlGa)₂O₃/Ga₂O₃/(AlGa)₂O₃ structure sandwiched between the heavily Sn-doped Ga₂O₃ layers exhibited negative differential resistance with a peak-to-valley current ratio of 2 at room temperature.