[11p-Z04-1~14] 13.7 化合物及びパワー電子デバイス・プロセス技術

▼ [11p-Z04-9] 145-MW/cm² NO₂-Doped Diamond MOSFETs

〇(D)Niloy Chandra Saha¹、Toshiyuki Oishi¹、Seongwoo Kim²、Yuki Kawamata²、Koji Koyama²、Makoto Kasu¹ (1.Saga Univ.、2.Adamant Namiki Precision Jewel Co., Ltd.)

キーワード：heteroepitaxial diamond, BFOM, NO2 doping

Diamond possesses superior physical properties that are desired for the high-power operation.We demonstrated that the hole sheet concentration of H-diamond increased by NO₂ p-type doping, and Al_{2</sub >O3 layer passivates and thermally stabilizes the hole channel. These technologies enabled diamond MOSFET to achieve a high current density of 1.3 A/mm. In this work, we fabricated NO2</sub >-doped p-type diamond MOSFETs and demonstrated low specific on-resistance (RON,spec), high breakdown voltage (VBR), and high Baliga's Figure-Of -Merits.}