[11p-Z07-1~14] 6.3 Oxide electronics

[11p-Z07-11] Thermally Stimulated Current in Sputtered Ir / Ta₂O₅ (II)

〇Guento Misawa¹, Hisashi Shima¹, Yasuhisa Naitoh¹, Hiroyuki Akinaga¹ (1.DTech-AIST)

Keywords:tantalum oxide, thermally stimulated current, trap level

Ta₂O₅, which has been familiar as a dielectric for capacitor, provides variety of resistive switch devices emerging on the market. Quantitative evaluation of the trap levels is important. It derives essential information for understanding and modeling of the device mechanisms. Thermal stimulus current (TSC) of the sputtered Ta₂O₅ film excited by light was measured at each heating rate to plot the peak temperatures and the trap depth was calculated. This time, we will report the detailed analysis results.