[11p-Z07-1~14] 6.3 Oxide electronics

△ [11p-Z07-5] Microstructure Changes in Digital and Analog Switching CBRAMs Observed by in situ TEM

〇Satoshi Muto¹, Tsutomu Nakajima¹, Atsushi Tsurumaki-Fukuchi¹, Masasi Arita¹, Yasuo Takahashi¹ (1.Hokkaido Univ.)

Keywords:ReRAM, CBRAM, in situ TEM

We evaluated relationship between switching characteristics and microstructure changes of CBRAMs having abrupt (or digital) and gradual (or analog) resistive switching characteristics by in situ TEM. CBRAM made of WO_X showed that an abrupt switching and a formation of Cu filament between electrodes. On the other hands, a CBRAM made of MoO_X showed that a gradual switching and a quite faint structure changes. In this study, differences of resistive switching characteristics were visualized as differences of microstructure changes which Cu diffusion speed was supposed to affect.