Effect of HfO<sub>2</sub> film on resistance change behavior under voltage pulses at RESET process of Ti/HfO<sub>2</sub>/Au-ReRAM device

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

Fri. Sep 11, 2020 1:00 PM - 4:45 PM Z07

Hisashi Shima(AIST), Seiichi KATO(物質・材料研究機構)

2:30 PM - 2:45 PM

〇Masahiro Morimoto¹, Rintaro Hatanaka¹, Takuya Yorioka¹, Tomohiro Shimizu¹, Takeshi Ito¹, Shoso Shingubara¹ (1.Kansai Univ.)

Keywords:ReRAM, artificial synapse