The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[11p-Z07-1~14] 6.3 Oxide electronics

Fri. Sep 11, 2020 1:00 PM - 4:45 PM Z07

Hisashi Shima(AIST), Seiichi KATO(物質・材料研究機構)

2:30 PM - 2:45 PM

[11p-Z07-7] Effect of HfO2 film on resistance change behavior under voltage pulses at RESET process of Ti/HfO2/Au-ReRAM device

Masahiro Morimoto1, Rintaro Hatanaka1, Takuya Yorioka1, Tomohiro Shimizu1, Takeshi Ito1, Shoso Shingubara1 (1.Kansai Univ.)

Keywords:ReRAM, artificial synapse