[11p-Z07-1~14] 6.3 Oxide electronics

[11p-Z07-9] Demonstration of Resistance Switching Devices Using Ga-In-Sn-Ta Liquid Metal Alloy Metal Oxide

〇Naoki Maeda¹, Takahiko Ban¹, Shinichi Yamamoto¹ (1.Ryukoku Univ.)

Keywords:Resistive switching, Liquid metal

A resistance change device was fabricated and evaluated. The Ga-In-Sn-Ta liquid metal alloy was used as the electrode. The metal oxide film Ta₂O₅ formed on the surface was used as the insulator layer. To control the contact point between the lower electrode and the insulator layer, a self-assembled monolayer ODPA-SAM was used to We measured the resistance change of the fabricated device. I-V measurements were performed on the fabricated devices and the resistance change behavior was confirmed. We also confirmed the re-formation of the broken insulator layer.