Optical absorption factor analysis in actual reflectance measurementby Optical Interference Contactless Thermometer

Tatsuki Koyanagi; Yuri Mizukawa; Hiroaki Hanafusa; Seiichirou Higasi

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[11p-Z09-1~15] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

Fri. Sep 11, 2020 12:45 PM - 5:15 PM Z09

Gento Yamahata(NTT BRL), Munehiro Tada(NEC), Kazuhiko Endo(AIST)

5:00 PM - 5:15 PM

[11p-Z09-15] Optical absorption factor analysis in actual reflectance measurementby Optical Interference Contactless Thermometer

〇Tatsuki Koyanagi¹, Yuri Mizukawa², Hiroaki Hanafusa², Seiichirou Higasi² (1.AdSM,Hiroshima Univ., 2.AdSE,Hiroshima univ.)

Keywords:OICT

In the case of simulating the self-heating of a device by electrically heating a thin metal film on a silicon wafer using an optical interference contactless thermometer (OICT) [1] using an infrared laser. In this study, we investigated the pulse width dependence of the reflectivity waveform measured when a metal thin film on a silicon wafer was heated by electric current.