[11p-Z12-1~17] 15.7 Crystal characterization, impurities and crystal defects

[11p-Z12-1] Dependence of phosphorus evaporation flux for phosphorus concentration during silicon crystal growth

〇Satoshi Nakano¹, Xin Liu¹, Xuefeng Han¹, Koichi Kakimoto¹ (1.RIAM, Kyushu Univ.)

Keywords:dopant, directional solidification method, numerical simulation

Phosphorus is one of typical dopant for silicon crystal growth. As the segregation coefficient for phosphorus is small, phosphorus distribution in a silicon crystal is inhomogeneous. Inhomogeneous impurity distribution has an important consequence for resistivity distribution in a silicon crystal. In this study, we investigated the relation between evaporation for phosphorus from the melt surface and distribution of phosphorus concentration during unidirectional solidification method by numerical simulation.