[11p-Z12-1~17] 15.7 Crystal characterization, impurities and crystal defects

[11p-Z12-15] Quality of silicon substrate and point defects (4) Precipitate nucleation and vacancy

〇Naohisa Inoue¹ (1.Osaka Prefecture Univ.)

Keywords:silicon crystal, oxygen precipitation, vacancy

Oxygen precipitation has detrimental and beneficial effects on device yield and performance. For precipitate engineering, the understanding of nucleation mechanism progresses. 1 Homogeneous nucleation model proposed by Freeland in 1977. 2 Measurement of nucleation rate and analysis by classical nucleation theory, homogeneous nucleation, heterogeneous nucleation. Till 1979 Inoue et al. developed the methods to measure the precipitate volume density and nucleation rate. We determined the nucleation rate dependence on oxygen content and annealing temperature, and obtained phenomenological equations. Homogeneous nucleation was supported. 3 Modified homogeneous nucleation. In 1981 Hu suggested that vacancy enhances the precipitation. 4 OSF ring and AOP observed in V-region. 5 Succesive nucleation of voids and OP by supersaturation of O and V was proposed by Voronkov in 2002. IR detection of VO_n is tried. The gettering using rapid thermal annealing to quench in the vacancies was developed.