[11p-Z12-1~17] 15.7 Crystal characterization, impurities and crystal defects

[11p-Z12-2] Numerical analysis on resistivity distribution of 200 mm (8 inch) FZ silicon during crystal growth process

〇Kendai Miyata¹, Xue-Feng Han², Koichi Kakimoto^1,2 (1.Kyushu Univ., 2.RIAM, Kyushu Univ.)

Keywords:FZ silicon, dopant, simulation

In this study, in order to investigate the resistivity of solid-liquid interface distribution during the crystal growth process of silicon produced by the FZ method, the three-dimensional numerical analysis of the silicon single crystal growth process by the FZ method is performed. In the calculation, the simulation model is created considering the high frequency electromagnetic field (HF-EM) field, static magnetic field, fluid flow, and heat transfer. The calculation results suggest that the normalized resistivity distribution in the radial direction has two local minimum values and that the resistivity of solid-liquid interface distribution is sensitive to the flow pattern.