[11p-Z12-1~17] 15.7 Crystal characterization, impurities and crystal defects

△ [11p-Z12-5] Evaluation of internal structure of GaN-HEMT

〇(M1)Keiichiro Kato¹, Keita Nakayama¹, Nobuo Satoh¹, Hidekazu Yamamoto¹ (1.Chiba Inst. of Tech.)

Keywords:GaN high electron mobility transistor, multi-functional scanning probe microscope, power device

Si, which is currently the mainstream for power device, is said to be near the limit of performance improvement. Therefore, a high-performance power electronic device can be manufactured by using a wide band gap semiconductor having a physical property value higher than that of Si as a crystal for a power device. Among them, GaN-HEMT (High Electron Mobility Transistor) using GaN is attracting attention. Because high frequency switching makes it possible to downsize peripheral devices. This time, we will report the results of evaluating the internal structure of GaN-HEMT using various measurement methods.