Structural Analysis of Na-flux GaN by Nanobeam X-ray Diffraction:<br />Local Lattice Constant Variation Depending on the Growth Mode

Zhendong WU; Kazuki Shida; Takeaki Hamachi; Yusuke Hayashi; Tetsuya Tohei; Masayuki Imanishi; Yusuke Mori; Kazushi Sumitani; Yasuhiko Imai; Shigeru Kimura; Akira Sakai

Presentation information

Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[11p-Z12-1~17] 15.7 Crystal characterization, impurities and crystal defects

Fri. Sep 11, 2020 12:30 PM - 5:15 PM Z12

Kazuhisa Torigoe(SUMCO), Susumu Maeda(GWJ), Takuo Sasaki(QST), Haruo Sudo(GlobalWafers)

1:45 PM - 2:00 PM

▼ [11p-Z12-6] Structural Analysis of Na-flux GaN by Nanobeam X-ray Diffraction:
Local Lattice Constant Variation Depending on the Growth Mode

〇(M2)Zhendong WU¹, Kazuki Shida¹, Takeaki Hamachi¹, Yusuke Hayashi¹, Tetsuya Tohei¹, Masayuki Imanishi², Yusuke Mori², Kazushi Sumitani³, Yasuhiko Imai³, Shigeru Kimura³, Akira Sakai¹ (1.Grad. Sch. Eng. Sci., Osaka Univ., 2.Grad. Sch. Eng., Osaka Univ., 3.JASRI)

Keywords:GaN, nanoXRD, Na-flux growth method

Presentation information

[11p-Z12-1~17] 15.7 Crystal characterization, impurities and crystal defects

▼ [11p-Z12-6] Structural Analysis of Na-flux GaN by Nanobeam X-ray Diffraction:Local Lattice Constant Variation Depending on the Growth Mode

▼ [11p-Z12-6] Structural Analysis of Na-flux GaN by Nanobeam X-ray Diffraction:
Local Lattice Constant Variation Depending on the Growth Mode