[11p-Z18-1~10] 3.11 Photonic structures and phenomena

△ [11p-Z18-7] 1.3 μm photonic crystal surface-emitting lasers using deep air-hole retained regrowth

〇Yuhki Itoh^1,2, Naoya Kono^1,2, Naoki Fujiwara^1,2, Hideki Yagi¹, Tomokazu Katsuyama¹, Takamitsu Kitamura¹, Kosuke Fujii¹, Mitsuru Ekawa¹, Hajime Shoji¹, Takuya Inoue², Menaka De Zoysa², Ishizaki Kenji², Susumu Noda² (1.Sumitomo Electric Industries, 2.Kyoto Univ.)

Keywords:Photonic crystal surface emitting laser

We have fabricated electrically injected InP-based photonic crystal surface-emitting lasers (PCSELs) which configured a photonic crystal (PC) structure underneath an active region using metal organic vapor phase epitaxial regrowth and successfully demonstrated lasing from 1.3-um wavelength under pulsed operation at room temperature. The enhancement of lateral growth during InP spacer regrowth enabled the formation of vertically-shaped air holes and the atomically-flat regrown interface. Our PCSEL exhibited the threshold current of 110 mA (threshold current density = 0.64 kA/cm²) with a p-electrode diameter of 150 um.