[11p-Z23-1~20] 16.3 Bulk, thin-film and other silicon-based solar cells

[11p-Z23-1] Correlation of GB triple junctions with dislocation generation in high-performance mc-Si

〇Yutaka Ohno¹, Kazuya Tajima², Kentaro Kutsukake³, Noritaka Usami² (1.IMR, Tohoku Univ., 2.GSE, Nagoya Univ., 3.RIKEN)

Keywords:Silicon, Dislocation clusters

A dislocation cluster degrading the PV properties is generated nearby a triple junction of GBs. Those dislocations are generated in a grain from the neighboring GB, accompanied with the movement of the junction. Occasionally, the atomic plane of the GB is sharply bent via the movement of the junction, supposedly due to micro-twins intersecting the GB nearby the junction, and a number of dislocation arrays are generated from the corners on the GB. The dislocation cluster is composed of bundles of low-angle GBs (LAGBs) and honeycombed dislocation networks on a {111} plane. Most of the dislocations have the same Burgers vector parallel to the {111} plane, suggesting that those dislocations are generated in the same slip system. Some dislocations in a honeycombed dislocation networks would change their expansion direction forming LAGBs when the dislocations are tangled. The generation processes of the dislocations will be discussed in terms of the impact of triple junctions of GBs.