[11p-Z29-1~16] 17.3 Layered materials

[11p-Z29-12] Investigation of contact resistance from edge of MoS₂ using vertical grown MoS₂ thin film

〇Joonam Kim^1,2, Takato Takaesu¹, Takenobu Funatsu¹, Mutsumi Sugiyama^1,2 (1.Tokyo Univ. of Sci., 2.RIST TUS)

Keywords:MoS2, Contact Resistance, CVD

The layered semiconductor material,especially MoS₂, has attracted attention because it shows high carrier mobility even though the thickness is several nm. Recently, there has been reported that the edge of MoS₂ has higher surface energy than plane of MoS₂. Hence, the higher surface energy state of edge of MoS₂ could be applied to high permance of catalyst and battery. To enhance the surface area with edge of MoS₂, the vertical MoS₂ thin film (T-MoS₂) was researched. However, there is no reports about the electrical properties of T-MoS₂ such contact resistance from edge of MoS₂. In this work, the fabricaiton of T-MoS₂ thin film and the measurement of electrical properties such as contact resistance were conducted.