The 81st JSAP Autumn Meeting, 2020

Presentation information

Symposium (Oral)

Symposium » The Third-generation dissimilar materials bonding and its application to the film growth control: Interface nano-kubernetes

[8a-Z06-1~5] The Third-generation dissimilar materials bonding and its application to the film growth control: Interface nano-kubernetes

Tue. Sep 8, 2020 9:00 AM - 11:30 AM Z06

Toshiyuki Kawaharamura(Kochi Univ. of Tech.), Hiroaki Nishikawa(Kindai Univ.)

9:45 AM - 10:15 AM

[8a-Z06-3] Effects of Interfacial Oxides on Room Temperature Bonding for Dissimilar Materials

Kazuhiro Ogawa1 (1.Tohoku Univ.)

Keywords:Surface activated bonding, Oxide filme, Dissimilar materials

Surface Activated Bonding (SAB) technique is a room temperature bonding technique. In this technique, the surfaces of materials are sputtered with Fast Atom Beam (FAB) to remove the foreign material on the surface including the oxide film in ultra-high vacuum chamber, and then two activated surfaces are contacted at the atomic level by pressing. It is possible to bond dissimilar metals without heating at all. Therefore, the existence of oxide film is a key factor for the bonding. In this study, influence of surface oxide film for the bonding of dissimilar metallic materials by SAB technique was investigated.