[8a-Z07-1~8] 6.3 Oxide electronics

△ [8a-Z07-6] Stable Resistive Switching Behaviors in Epitaxial Thin Films of Ca₂RuO₄ Based on the Current-Induced Metal-Insulator Transition

〇Keiji Tsubaki¹, Tenki Ishida¹, Atsushi Tsurumaki-Fukuchi¹, Takayoshi Katase², Toshio Kamiya², Masashi Arita¹, Yasuo Takahashi¹ (1.IST, Hokkaido Univ., 2.MSL, Tokyo Tech.)

Keywords:metal-insulator transition, ruthenium oxide, current-induced phase transition

Resistive switching phenomenon based on the current-induced metal-insulator transition were investigated in epitaxial thin films of Ca₂RuO₄ through the current–electric-field characteristics measurements. By applying currents or electric fields at a temperature below 80 K, our Ca₂RuO₄ thin films demonstrated clear resistive switching phenomenon ascribed to the current-induced metal-insulator transition, and the distributions of the switching threshold currents and fields were very small. These results suggest that the Ca₂RuO₄ thin films have a high operational stability in the resistive switching due to the current-induced transition, as compared with conventional materials with temperature-induced metal-insulator transition including VO₂, and their advantages in Mott-electronic devices.