[8a-Z08-1~8] 10.4 Semiconductor spintronics, superconductor, multiferroics

▼ [8a-Z08-2] Growth and characterization of ferromagnetic Fe-doped GaSb quantum dots with high Curie temperature

〇(D)Sriharsha Karumuri¹, Anh Le Duc^1,2,4, Yuuji Shimada³, Takuji Takahashi^3,5, Masaaki Tanaka^1,5,6 (1.EEIS, UTokyo, 2.Presto, JST, 3.IIS, UTokyo, 4.IEI, UTokyo, 5.INQIE, UTokyo, 6.CSRN, Utokyo)

Keywords:ferromagnetic semiconductors, quantum dots, high curie temperature

We report the structural and magnetic properties of the Fe-doped GaSb quantum dots (QDs) (nominal Fe concentration x = 4.7 – 16.6%) grown on GaAs (001) substrates by molecular beam epitaxy (MBE). The QDs with nanometer-scale dimensions consist of two areas with different crystal structures, a zinc-blende (ZB) GaAsSb wetting layer and a new phase of FeGaSb alloy that has a simple cubic lattice. The size and distribution of the QDs depend on the Fe concentration, as revealed by atomic force microscopy (AFM). Magnetic force microscopy (MFM) measurements at zero applied magnetic field show the presence of ferromagnetism in the QDs at room temperature with an easy axis in the direction, which is consistent with magnetometry measurements. The Curie temperature in these QDs is very high (> 400K), which is promising for spintronic applications at room temperature.