[8a-Z17-1~10] 6.1 Ferroelectric thin films

△ [8a-Z17-3] Characterizations of direct and converse piezoelectric properties of epitaxial Pb(Zr,Ti)O₃ thin films grown on Si substrates

〇Geng Tan¹, Eun-Ji Kim², Sang-Hyo Kweon³, Isaku Kanno³ (1.Osaka Pref. Univ., 2.Korea Univ., 3.Kobe Univ.)

Keywords:epitaxial piezoelectric thin film, piezoelectric property, crystal structure analysis

Pb(Zr,Ti)O₃ (PZT) thin films have been used as various devices due to their high piezoelectric properties. In order to improve the performance of piezoelectric devices, it is required to fabricate the PZT thin films with large transverse piezoelectric coefficients (e_31,f) and small dielectric constants. In this study, we deposited epitaxial PZT thin films on Si substrates by sputtering method. We characterized the fundamental properties such as crystalline orientation, piezoelectric properties and dielectric property comprehensively. Unimorph cantilevers were fabricated to evaluate the piezoelectric coefficients via the converse piezoelectric effect as well as the direct piezoelectric effect.