The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

9 Applied Materials Science » 9.4 Thermoelectric conversion

[8a-Z18-1~11] 9.4 Thermoelectric conversion

Tue. Sep 8, 2020 8:30 AM - 11:30 AM Z18

Takahiro Yamada(Tohoku Univ.), Koichiro Suekuni(九大)

11:15 AM - 11:30 AM

[8a-Z18-11] Formamidinium doped CsSnI3 perovskite for thermoelectric applications

Ajay Kumar Baranwal1, Shrikant Saini2, Tomohide Yabuki2, Qing Shen1, Koji Miyazaki2, Shuzi Hayase1 (1.Univ of Electro-Comm, 2.Kyushu Inst. Tech.)

Keywords:Perovskite, CsSnI3, Thermoelectric devices

Halide perovskite materials (AMX3; A=CH3NH3+, NH2CHNH2+/FA+; M=Pb2+, Sn2+; X=I-) have found paramount attraction in thermoelectric study owing to ultra-low thermal conductivity, which appears because of the rattling phenomenon of A–site, surrounded by MX6 octahedra. The tuning of A-site cation alters the crystal packing density and the Gold-Smith tolerance factor would be influenced to mediate the electronic properties.
Inorganic CsSnI3 crystal has been widely discussed recently due to promising thermoelectric applications owing to high electrical conductivity and ultra-low thermal conductivity. However, its poor tolerance factor (0.816) shows CsSnI3 crystal is much strained. Here, we study the thermoelectric properties of perovskite crystal under the influence of tuning of A-site with large radius cation FA+. The A-site doping improves the tolerance factor, alters the electronic and thermoelectric properties of perovskite crystal. A series of CsxFA1-xSnI3 thin films have been fabricated and the resulting thermoelectric performance is studied. The details will be discussed in the conference.