11:15 〜 11:30
▲ [8a-Z18-11] Formamidinium doped CsSnI3 perovskite for thermoelectric applications
キーワード：Perovskite, CsSnI3, Thermoelectric devices
Halide perovskite materials (AMX3; A=CH3NH3+, NH2CHNH2+/FA+; M=Pb2+, Sn2+; X=I-) have found paramount attraction in thermoelectric study owing to ultra-low thermal conductivity, which appears because of the rattling phenomenon of A–site, surrounded by MX6 octahedra. The tuning of A-site cation alters the crystal packing density and the Gold-Smith tolerance factor would be influenced to mediate the electronic properties.
Inorganic CsSnI3 crystal has been widely discussed recently due to promising thermoelectric applications owing to high electrical conductivity and ultra-low thermal conductivity. However, its poor tolerance factor (0.816) shows CsSnI3 crystal is much strained. Here, we study the thermoelectric properties of perovskite crystal under the influence of tuning of A-site with large radius cation FA+. The A-site doping improves the tolerance factor, alters the electronic and thermoelectric properties of perovskite crystal. A series of CsxFA1-xSnI3 thin films have been fabricated and the resulting thermoelectric performance is studied. The details will be discussed in the conference.
Inorganic CsSnI3 crystal has been widely discussed recently due to promising thermoelectric applications owing to high electrical conductivity and ultra-low thermal conductivity. However, its poor tolerance factor (0.816) shows CsSnI3 crystal is much strained. Here, we study the thermoelectric properties of perovskite crystal under the influence of tuning of A-site with large radius cation FA+. The A-site doping improves the tolerance factor, alters the electronic and thermoelectric properties of perovskite crystal. A series of CsxFA1-xSnI3 thin films have been fabricated and the resulting thermoelectric performance is studied. The details will be discussed in the conference.