[8a-Z18-1~11] 9.4 Thermoelectric conversion

[8a-Z18-5] Controlling conduction type by Si content in Ca-Mg-Si ternary thermoelectric material

〇Atsuo Katagiri¹, Mutsuo Uehara¹, Mao Kurokawa¹, Kensuke Akiyama^1,2, Masaaki Matsushima¹, Hiroshi Uchida³, Yoshisato Kimura¹, Hiroshi Funakubo¹ (1.Tokyo Tech, 2.KISTEK, 3.Sophia Univ.)

Keywords:Thermoelectric materials, Silicide, Thin film

I preprared the Ca-Mg-Si ternary material by extending the attractive thermoelectric material, Mg₂Si. This material was prepared with sputtering method. We will report about the controlling way of conductive type by changing the Si ratio of sputtering target.