Keywords:Thermoelectric, Mg2Sn, point defect engineering
In this work, we focus on Mg2Sn, which is one of the potential thermoelectric (TE) materials that directly convert waste heat into electricity. Among all the strategies to enhance the TE performance of Mg2Sn, an introduction of Mg vacancies (VMg) and Sb-doping are one of the most effective methods for the reducing a lattice thermal conductivity, κlat, and improving a power factor, PF, respectively. Thus, we performed those methods to the Mg2Sn single-crystal ingots. The minimum κlat and maximum PF values of prepared ingot are lower and higher than those of Sb-doped Mg2Sn polycrystals. This result demonstrated that the Mg2Sn single-crystal ingot can be used for TE power generation by combining the introduction of VMg and Sb-doping method.