[8a-Z18-1~11] 9.4 Thermoelectric conversion

△ [8a-Z18-8] Enhancing Thermoelectric Performance of Mg₂Sn Single Crystals via Introduction of Mg Vacancy Defects and Sb-doping

〇(D)Wataru Saito¹, Kei Hayashi¹, Zhicheng Huang¹, Yuzuru Miyazaki¹ (1.Tohoku University)

Keywords:Thermoelectric, Mg2Sn, point defect engineering

In this work, we focus on Mg₂Sn, which is one of the potential thermoelectric (TE) materials that directly convert waste heat into electricity. Among all the strategies to enhance the TE performance of Mg₂Sn, an introduction of Mg vacancies (V_Mg) and Sb-doping are one of the most effective methods for the reducing a lattice thermal conductivity, κ_lat, and improving a power factor, PF, respectively. Thus, we performed those methods to the Mg₂Sn single-crystal ingots. The minimum κ_lat and maximum PF values of prepared ingot are lower and higher than those of Sb-doped Mg₂Sn polycrystals. This result demonstrated that the Mg₂Sn single-crystal ingot can be used for TE power generation by combining the introduction of V_Mg and Sb-doping method.