2020年第81回応用物理学会秋季学術講演会

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一般セッション(口頭講演)

16 非晶質・微結晶 » 16.2 エナジーハーベスティング

[8a-Z26-1~4] 16.2 エナジーハーベスティング

2020年9月8日(火) 10:00 〜 11:00 Z26

舟橋 良次(産総研)

10:00 〜 10:15

[8a-Z26-1] Enhancement of thermoelectric properties of hybrid-halide perovskites thin films using anti-solvent

〇(P)Shrikant Saini1、Ajay Baranwal2、Tomohide Yabuki1、Shuzi Hayase2、Koji Miyazaki1 (1.Kyushu Institute of Technology、2.The Univ. of Electro-communications)

キーワード:Hybrid Halide Perovskites, Thermoelectric, thin film coating

The conversion efficiency of thermoelectric material is quantified by figure of merit ZT (=σS2T/κ: σ is electrical conductivity, S is Seebeck coefficient and κ is thermal conductivity). CH3NH3SnI3 (MASnI3) single crystals have intrinsic high value of Seebeck coefficient due to charge-carrier mobility and ultra-low thermal conductivity due to the rotational motion of cations in the lattice even though it has only focused for optical energy conversion. However, optimization of electrical conductivity is still challenging which can lead to a landmark for thermoelectric application of this material. In this study, we optimize the growth parameters of MASnI3 thin films by spin coating technique.
Thin films are fabricated by spin coating technique using a yellow precursor solution of MASnI3. The yellow solution is prepared by MAI, SnI2 precursors. During the fabrication process, we optimized growth parameters such as baking time and the presence of anti-solvent. MASnI3 thin films have shown p-type semiconducting behavior. MASnI3 thin films were thoroughly characterized using several state-of-the-art techniques including XRD and SEM. Temperature dependent Seebeck coefficient, electrical resistivity and thermal conductivity measurements were performed. MASnI3 thin films baked at 100°C for 5 min with anti-solvent shows the best result with Seebeck coefficient about 65 μV/K and electrical conductivity of about 2 S/cm near room temperature.