[8a-Z28-1~5] Development of the engineering for the diverse stable phases ~Objectives for the future environment, energy materials and devices

[8a-Z28-2] Phase-controlled epitaxy and applications of ultra-wide bandgap semiconductor Ga₂O₃

〇Yuichi Oshima¹ (1.NIMS)

Keywords:Ga2O3, Meta-stable, HVPE

Metastable Ga₂O₃ are ultra-wide bandgap semiconductors (E_g ~ 4.9 - 5.3 eV), and promising for future power devices, solar-blind sensors, etc. To utilize metastable Ga₂O₃ for such device applications, it is necessary to establish an epitaxial growth technique, which can grow phase-pure films of the target polymorph. In the present work, we overview state-of-the art situation of the phase control and attempts to reduce defect density, with particular emphasis on halide vapor phase epitaxy.