[8p-Z06-1~9] The Third-generation dissimilar materials bonding and its application to the film growth control: Interface nano-kubernetes

[8p-Z06-8] Defects observation in GaN pn junction diodes by optical and electrical property

〇Yoshio Honda^1,2, Atsushi Tanaka^1,3, Seiya Kawasaki⁴, Manato Deki^4,5, Amano Hiroshi^1,3,5,6 (1.IMass, Nagoya Univ., 2.IAR, Nagoya Univ., 3.NIMS, 4.Dept. of Elect., Nagoya Univ., 5.VBL, Nagoya Univ.VBL, Nagoya Univ., 6.ARC, Nagoya Univ.)

Keywords:Multiphoton excitation, GaN pn diode, killer defect

The multiphoton excitation makes it possible to generate electron-hole pairs directly inside the solid. By using this method for nitride semiconductors, we could get the entire image of dislocation and the propagation mechanism. The details of the defects became clear by combining this method with TEM, . Furthermore, in combination with electrical characteristics, the electric field and current inside the crystal can be visualized.