[8p-Z08-1~8] 10.4 半導体スピントロニクス・超伝導・強相関

▲ [8p-Z08-6] Anisotropic spin dephasing on magnetic field orientation in GaAs-based wire structures

〇(M1)Junpei Sonehara¹、Dai Sato¹、Daisuke Iizasa¹、Michael Kammermeier²、Uli Zuelicke²、Shutaro Karube^1,3、Junsaku Nitta^1,3,4、Makoto Kohda^1,3,4,5 (1.Dept. of Mat. Sci., Tohoku Univ.、2.Victoria Univ. of Wellington、3.CSRN, Tohoku Univ.、4.CSIS Tohoku Univ.、5.FRiD, Tohoku Univ.)

キーワード：spintronics, wire structure

We investigated the anisotropic spin dephasing depending on the direction of external magnetic field in semiconductor wires based on a 20-nm (001)-oriented GaAs/AlGaAs quantum well (QW). We employed time-resolved Kerr rotation microscopy for measuring the spin dephasing time in the wires. Spin dephasing time exhibits anisotropy with two-fold symmetry, which is enhanced when B_ex and spin-orbit fields are orthogonal to each other. By solving the spin diffusion equation, we obtained the analytical formula to explain such an enhanced spin dephasing time by the lateral confinement of electron momentum.