[8p-Z08-1~8] 10.4 半導体スピントロニクス・超伝導・強相関

▼ [8p-Z08-7] P-doping concentration dependence of electron-spin dynamics in InGaAs quantum well-dot coupled structures applied with electric field

〇Soyoung Park¹、Hang Chen¹、Satoshi Hiura¹、Junichi Takayama¹、Akihiro Murayama¹ (1.IST, Hokkaido Univ.)

キーワード：quantum dot, electric-field, p-doping

III-V semiconductor quantum dots (QDs) are expected as an optically active layer because of the suppressed carrier spin relaxation obtained via their strong quantum confinements. Since the loss of electron spin information is unavoidable due to rapid spin relaxation in semiconductor barriers, it is necessary to control the spin polarization in QDs through an efficient injection of electron spins into them. In this study, we have fabricated electric-field-effect optical devices using InGaAs QW-QD tunnel-coupled structures doped with 0, 5, and 15 holes per QD. Then, we have studied the electron-spin dynamics in QDs using circularly-polarized time-resolved photoluminescence (PL).