[8p-Z08-1~8] 10.4 Semiconductor spintronics, superconductor, multiferroics

▼ [8p-Z08-8] Suppression of thermal spin relaxation of InGaAs quantum dots by p-doping

〇Shino Sato¹, Satoshi Hiura¹, Junichi Takayama¹, Akihiro Murayama¹ (1.IST, Hokkaido Univ.)

Keywords:quantum dot, thermal spin relaxation, p-doping

Semiconductor quantum dots (QDs) have attracted great attention as an optically active layer of spin-functional optical devices that transmit electron-spin information superimposed on light. However, at high temperatures, electron spins are thermally excited to the barrier and the spin polarization in QDs is significantly reduced as a result of the reinjection of thermally depolarized spins. In this study, we demonstrated an enhanced room-temperature spin polarization using InGaAs QDs with p-doped capping barriers. This increased spin polarization was mainly attributed to the suppressed relaxation of the electron spins reinjected from the p-doped capping barrier, where the D'yakonov-Perel' spin relaxation in the barrier was potentially weakened through impurity scattering.