The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

13 Semiconductors » 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[8p-Z10-1~11] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

Tue. Sep 8, 2020 1:00 PM - 4:00 PM Z10

Toshihiro Nakaoka(Sophia Univ.), Ryuichi Ohta(NTT)

3:15 PM - 3:30 PM

[8p-Z10-9] Effects of exciton stability on interaction between heavy-hole and light-hole excitons in a GaAs/AlAs multiple quantum well observed by reflectivity change

Osamu Kojima1, Takashi Kita1, Richard Hogg2 (1.Kobe Univ, 2.Univ. Glasgow)

Keywords:exciton, interaction, quantum well

The interaction between the heavy-hole and light-hole excitons in a GaAs/AlAs multiple quantum well is discussed from the results using the continuous wave lasers. The results of the reflectivity change of the heavy hole excitons under the excitation of the light hole excitons, the reflectivity change was changed with the laser light intensity of the heavy hole excitons. This change is considered to be due to the interaction between the heavy-hole and light-hole excitons depending on the stability of the heavy hole excitons.