[8p-Z17-1~12] 6.1 強誘電体薄膜

▼ [8p-Z17-7] Self-Assembly of Ultrathin PVDF on Monolayer Graphene Oxide

〇(D)Viswanath Pamarti¹、K. Kanishka H. De Silva¹、Masamichi Yoshimura¹ (1.Toyota Tech Inst.)

キーワード：ferroelectric, PVDF, graphene oxide

Ferroelectric random access memories (FeRAM) are a class of nonvolatile memories that employ ferroelectric (FE) thin films as active materials. Depending on the direction of the polarization (up and down) in a FE material, they represent binary memory states “0” or “1”. In the present study, we employed monolayer (~1 nm thick) graphene oxide (GO) for crystallization of 40 nm PVDF-TrFE film by a self-assembly approach. GO provides high orientation to PVDF chains in a specific direction providing excellent ferroelectric nature.A large piezoresponse of 145.75 ± 20.91 pm/V was observed in the ultrathin FE film which is 10 times higher than the conventional perovskite based FE films. The FE domains remained stable for more than 1500 h with no volatilization revealing excellent domain stability. As these ultrathin FE films reveal highly dense memory, these materials will be explored further for applications in FeRAM.