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▲ [8p-Z22-1] High thermoelectric performance of Si-Ge alloy by modifying the electronic structure
Keywords:Si-Ge, ball milling, thermoelectric property
Our previous studies revealed that the B-doped Si-Ge-Au thin film and bulk sample possessed a ZT value of 1.38 and 1.63 at 1000K. We found that the electron transport properties were constructively improved using Au-doping to form an impurity state near the valence band top, and B-doping to control the Fermi level. Very small thermal conductivity ~ 1.5 Wm-1K-1 was obtained due to nanograins. However, Au is an expensive element, and more than ZT = 1.63 is required for improving efficiency. In the present study, we synthesized bulk noncrystalline B-doped Si-Ge alloy with other metal substitution, which is a cheap and non-toxic element. Thermoelectric properties (TE) of bulk nanocrystalline samples were investigated as a function of temperature 300 – 1000 K, respectively.