The 81st JSAP Autumn Meeting, 2020

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Symposium (Oral)

Symposium » Development of the engineering for the diverse stable phases ~Objectives for the future environment, energy materials and devices

[8p-Z28-1~9] Development of the engineering for the diverse stable phases ~Objectives for the future environment, energy materials and devices

Tue. Sep 8, 2020 1:30 PM - 5:45 PM Z28

Hideaki Araki(Natl. Inst. of Tech.,Nagaoka Col.), Fumio Kawamura(NIMS)

4:30 PM - 4:45 PM

[8p-Z28-7] High pressure synthesis and structural evaluation of novel II-Sn-N2 semiconductors.

〇Fumio Kawamura1, Hidenobu Murata2, Naoomi Yamada3 (1.NIMS, 2.Osaka pref. Univ., 3.chubu Univ.)

Keywords:multiple element semiconductor, nitride, high pressure

We have synthesized novel nitride materials such as ReN2, W3N4 and so on. Recently, we successfully developed the synthesis route of ZnSnN2 semiconductor via high-pressure synthesis method. In this study, MgSnN2 and other II-Sn-N2 system compounds, in which di-valent cation is replaced with Zn in ZnSnN2, was examined. We analyzed the structural features and evaluated the properties on II-Sn-N2 semiconductors.